DMN5L06DWK document number: ds30930 rev. 7 - 2 1 of 6 www.diodes.com march 2017 ? diodes incorporated DMN5L06DWK new product dual n - channel enhancement mode mosfet features ? dual n - channel mosfet ? low on - resistance (1.0v m ax) ? very low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra - small surface mount package ? esd protected up to 2kv ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot363 ? case material: molded plastic, green molding c ompound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over alloy 42 l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 06 grams ( a pproximate) ordering information (note 4 ) part number case packaging DMN5L06DWK - 7 sot363 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see https://www.diodes.com/quality/lead - free/ for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green produ cts are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2006 2007 2008 2012 2013 2014 2015 2016 2017 201 8 201 9 code t u v month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 top view t op view internal schematic dab = marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september esd protected to 2kv s 1 d 1 d 2 s 2 g 1 g 2 dab ym d a b y m
DMN5L06DWK document number: ds30930 rev. 7 - 2 2 of 6 www.diodes.com march 2017 ? diodes incorporated DMN5L06DWK new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain source voltage v dss 50 v gate - source voltage v gss ? d 305 800 ma thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 250 mw thermal resistance, junction to ambient r ja 500 c/w operating and storage temperature range t j , t stg - 65 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristic s (note 7 ) drain - source breakdown voltage bv dss 50 ? ? gs = 0v, i d = 10 a zero gate voltage drain current @ t c = + 25c i dss ? ? ds = 50v, v gs = 0v gate - body leakage i gss ? ? gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 7 ) gate thresh old voltage v gs(th) 0.49 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? ? ? ? ? ? ? ? ? ? gs = 1.8v, i d = 50ma v gs = 2.5v, i d = 50ma v gs = 5.0v, i d = 50ma on - state drain current i d(on) 0.5 1.4 ? gs = 10v, v ds = 7.5v forward transconductance |y fs | 200 ? ? ds =10v, i d = 0.2a source - drain diode forward voltage v sd 0.5 ? gs = 0v, i s = 115ma dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0v, v gs = 0v, f = 1mhz total gate charge q g ? ? ? ? g s = 4.5 v v ds = 10 v, i d = 0.25 a gate - source charge q gs ? ? ? ? gd ? ? ? ? d( on ) ? ? ? ? d d = 30 v, v gs = 10 v, r g = 25 ? d = 0.2 a turn - on rise time t r ? ? ? ? d( off ) ? ? ? ? f ? ? ? ? notes: 5 . device mounted on fr - 4 pcb. 6 . pulse width ? 10 s, duty cycle ? 1%. 7 . short duration pulse test used to minimize self - heating effect. 8. guaranteed by design. not subject to product testing.
DMN5L06DWK document number: ds30930 rev. 7 - 2 3 of 6 www.diodes.com march 2017 ? diodes incorporated DMN5L06DWK new product v , drain-source voltage (v) fig. 1 typical output characteristics ds v , gate-source voltage (v) fig. 2 typical transfer characteristics gs t , channel temperature (c) fig. 3 gate threshold voltage vs. channel temperature ch 0 -50 -25 0 25 50 75 100 125 150 0 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source voltage gs, r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ?
DMN5L06DWK document number: ds30930 rev. 7 - 2 4 of 6 www.diodes.com march 2017 ? diodes incorporated DMN5L06DWK new product t , ambient temperature ( c) fig. 7 a static drain-source on-state resistance vs. ambient temperature r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , r e v e r s e d r a i n c u r r e n t ( a ) d r i , r e v e r s e d r a i n c u r r e n t ( a ) d r 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current | y | , f o r w a r d t r a n s f e r a d m i t t a n c e ( s ) f s -50 0 50 100 150 250 200 150 50 100 0 t , ambient temperature ( c) fig. 11 derating curve - total a p , p o w e r d i s s i p a t i o n ( m w ) d
DMN5L06DWK document number: ds30930 rev. 7 - 2 5 of 6 www.diodes.com march 2017 ? diodes incorporated DMN5L06DWK new product package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot363 sot363 dim min max typ a1 0.00 0.10 0.05 a2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 d 1.80 2.20 2.15 e 2.00 2.20 2.10 e1 1.15 1.35 1.30 e 0.650 bsc f 0.40 0.45 0.425 l 0.25 0.40 0.30 a 0 8 -- all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot363 dimensions value (in mm) c 0.650 g 1.300 x 0.420 y 0.600 y1 2.500 e d l e1 b e f a2 a1 c a y1 g y x c
DMN5L06DWK document number: ds30930 rev. 7 - 2 6 of 6 www.diodes.com march 2017 ? diodes incorporated DMN5L06DWK new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries r eserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or u se of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such application s shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liabili ty whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as cr itical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implan t into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical c omponent is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all neces sary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use o f diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes inc orporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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